HGT1S10N120BNST

Part Number:
HGT1S10N120BNST
Manufacturer:
onsemi
Other Part Numbers:
-
Description:
IGBT NPT 1200V 35A TO-263
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 1200 V
Power - Max 298 W
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge 100 nC
IGBT Type NPT
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Current - Collector Pulsed (Icm) 80 A
Current - Collector (Ic) (Max) 35 A
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10Ohm, 15V
Switching Energy 320µJ (on), 800µJ (off)